MSN06M3E
60V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
ESD Rating:HBM 2300V
● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoid...