MSN0860D
75V(D-S) N-Channel Enhancement Mode Power MOS FET
Features
● VDS=75V；ID=60A@ VGS=10V； RDS(ON)<8.5mΩ @ VGS=10V
● Special process technology for high ESD capability ● Special designed for Convertors and power controls ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity wi...
