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MSN08B1K Datasheet

Part Number MSN08B1K
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel MOSFET
Datasheet MSN08B1K DatasheetMSN08B1K Datasheet (PDF)

MSN08B1K 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply .

  MSN08B1K   MSN08B1K






N-Channel MOSFET

MSN08B1K 75V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 75V,ID =110A RDS(ON) < 9mΩ @ VGS=10V (Typ:7.5mΩ) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Lead Free PIN Configuration Marking and pin assignment TO-220-3L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN08B1K MSN08B1K TO-220-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID ID (100℃) Pulsed Drain Current.


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