MSN138
50V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
● Lead free product is acquired ● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers , display,
memories, transistors, etc. ●Battery operated systems ●Solid-state relays
PIN Configuration
Lead Free
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Orderin.
N-Channel MOSFET
MSN138
50V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V
● Lead free product is acquired ● Surface mount package
Application
●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers , display,
memories, transistors, etc. ●Battery operated systems ●Solid-state relays
PIN Configuration
Lead Free
Marking and pin assignment
SOT-23 top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device MSN138
Device Package SOT-23
Reel Size Ø180mm
Tape width 8 mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
50 ±20 0.22 0.88 0.35 -55 To 150
Unit
V V A A W ℃
Thermal Ch.