MSN6004F
600V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=1...
MSN6004F
600V(D-S) N-Channel Enhancement Mode Power MOS FET
General Features
● VDS =600V,ID =4A RDS(ON) <2.4 Ω @ VGS=10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Lead Free
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
PIN Configuration
Marking and pin assignment
TO-220F top view
Schematic diagram
Package Marking and Ordering Information
Device Marking Device Device Package
MSN6004F
MSN6004F
TO-220F-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Continuous(TC=100℃)
ID
ID (100℃)
Pulsed Drain Current Maximum Power Dissi...