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MSN7002F Datasheet

Part Number MSN7002F
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Datasheet MSN7002F DatasheetMSN7002F Datasheet (PDF)

MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transforme.

  MSN7002F   MSN7002F






Part Number MSN7002Z
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Datasheet MSN7002F DatasheetMSN7002Z Datasheet (PDF)

MSN7002Z 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transforme.

  MSN7002F   MSN7002F







Part Number MSN7002E
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Datasheet MSN7002F DatasheetMSN7002E Datasheet (PDF)

MSN7002E 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.3A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ESD Rating:HBM 2300V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package ● ESD protected Lead Free Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids, lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays PIN Configuration Marking .

  MSN7002F   MSN7002F







Part Number MSN7002D
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Datasheet MSN7002F DatasheetMSN7002D Datasheet (PDF)

MSN7002D 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transforme.

  MSN7002F   MSN7002F







Part Number MSN7002
Manufacturers MORESEMI
Logo MORESEMI
Description N-Channel Enhancement Mode Power MOS FET
Datasheet MSN7002F DatasheetMSN7002 Datasheet (PDF)

MSN7002 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 60V,ID = 0.115A RDS(ON) < 3Ω @ VGS=5V RDS(ON) < 2Ω @ VGS=10V ● Lead free product is acquired ● Surface mount package Application ●Direct logic-level interface: TTL/CMOS ●Drivers: relays, solenoids,lamps, hammers,display, memories, transistors, etc. ●Battery operated systems ●Solid-state relays Lead Free PIN Configuration Marking and pin assignment SOT-23 top view Schematic diagram Package Marking and Order.

  MSN7002F   MSN7002F







N-Channel Enhancement Mode Power MOS FET

MSN7002F 700V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =700V,ID =2A RDS(ON) <6.5 Ω @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Lead Free Application ● Power switching application ● Hard switched and high frequency circuits ● Electronic ballast and transformer PIN Configuration Marking and pin assignment TO-220F top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package MSN7002F MSN7002F TO-220F Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power .


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