MSP0307W
-30V(D-S) P-Channel Enhancement Mode Power MOS FET
General Features
● VDS =-30V,ID =-6.5A RDS(ON) < 42mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Application
● Load switch ● battery protection
Lead Free
PIN Configuration
Marking and pin assignment
SO...
