Extra High Barrier Silicon Schottky Diodes
MSS60-xxx-x Series
Extra High Barrier Silicon Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lea...
Description
MSS60-xxx-x Series
Extra High Barrier Silicon Schottky Diodes
Features
VF, RD and CJ Matching Options Chip, Beam Lead and Packaged Devices Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
Rev. V1
Beam Lead
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
V
MSS60-144-B10B
Single Junction
625
MSS60-148-B10B
Single Junction
625
MSS60-153-B10B
Single Junction
625
MSS60-244-B20
Series Tee
625
MSS60-248-B20
Series Tee
625
MSS60-253-B20
Series Tee
625
MSS60-444-B41
Ring Quad
650
MSS60-448-B41
Ring Quad
650
MSS60-453-B41
Ring Quad
650
MSS60-841-B80
Ring Quad
1200
MSS60-846-B80
Ring Quad
1200
MSS60-848-B80
Ring Quad
1200
Test Conditions
IF = 1 mA
VBR Min....
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