MSS60-448-B41

MSS60-xxx-x Series Extra High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS60-144-B10B Single Junction 625 MSS60-148-B10B Single Junction 625 MSS60-153-B10B Single Junction 625 MSS60-244-B20 Series Tee 625 MSS60-248-B20 Series Tee 625 MSS60-253-B20 Series Tee 625 MSS60-444-B41 Ring Quad 650 MSS60-448-B41 Ring Quad 650 MSS60-453-B41 Ring Quad 650 MSS60-841-B80 Ring Quad 1200 MSS60-846-B80 Ring Quad 1200 MSS60-848-B80 Ring Quad 1200 Test Conditions IF = 1 mA VBR Min....