MT28C128564W18

ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM™ COMBO MEMORY Features Stacked die Combo package Includes two 64Mb Flash devices Choice of either one 32Mb or one 64Mb www.DataSheet4U.com CellularRAMÔ device Basic configuration Flash Flexible multibank architecture 4 Meg x 16 Async/Page/Burst interface Support for true concurrent operations with no latency CellularRAM Low-power, high-density design 2 Meg x 16 or 4 Meg x 16 configurations Async/Page F_VCC, VCCQ, F_VPP, PS_VCC voltages 1.70V (MIN)/1.95V (MAX) F_VCC, PS_VCC 1.70V (MIN)/2.24V (MAX) VCCQ (W18) 1.70V (MIN)/3.3V(MAX) VCCQ (W30) 1.80V (TYP) F_VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) F_VPP (in-house programming and accelerated programming algorithm [APA] activation) Asynchronous access time Flash/CellularRAM access time: 60ns @ 1.70V VCC Page Mode read access (W18/W30) Interpage read access: 60ns @ 1.70V F_VCC , PS_VCC (W18) Intrapage read access: 20ns @ 1.70V F_VCC, PS_VCC (W18) Interpage read access: 70ns @ 1.70V F_VCC , PS_VCC (W30) Intrapage read access: 22ns @ 1.70V F_VCC, PS_VCC (W30) Enhanced suspend options ERASE-SUSPEND-to-READ within same bank PROGRAM-SUSPEND-to-READ within same bank ERASE-SUSPEND-to-PROGRAM within same bank Read/Write CellularRAM during program/erase of Flash Each Flash contains two 64-bit chip protection registers for security purposes Flash PROGRAM/ERASE cycles 100,000 WRITE/ERASE cycles per block Cross-compatible co...