MT28F200B5

www.DataSheet4U.com 2Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F002B5 MT28F200B5 5V Only, Dual Supply (Smart 5) 40-Pin TSOP Type I 48-Pin TSOP Type I Five erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Two main memory blocks Smart 5 technology (B5): 5V ±10% VCC 5V ±10% VPP application/production programming 12V ± 5% VPP compatibility production 44-Pin SOP programming Address access times: 60ns, 80ns 100,000 ERASE cycles Industry-standard pinouts Inputs and outputs are fully TTL-compatible Automated write and erase algorithm DataShee Two-cycle WRITE/ERASE sequence Byte- or word-wide READ and WRITE DataSheet4U.com (MT28F200B5, 128K x 16/256K x 8) Byte-wide READ and WRITE only GENERAL DESCRIPTION (MT28F002B5, 256K x 8) The MT28F002B5 (x8) and MT28F200B5 (x16/x8) TSOP and SOP packaging options are nonvolatile, electrically block-erasable (flash), programmable, read-only memories containing 2,097,152 OPTIONS MARKING bits organized as 262,144 bytes (8 bits) or 131,072 Timing words (16 bits). Writing or erasing the device is done 60ns access -6 with a 5V VPP voltage, while all operations are per80ns access -8 formed with a 5V VCC. Due to process technology 80ns access -8 ET advances, 5V VPP is optimal for application and produc Configurations tion programming. For backward compatibility with 256K x 8 MT28F002B5 SmartVoltage technology, 12V VPP is supported for a 128K x 16/256K x 8 MT28F200B5 maximum of 100 cy...