MT28F800B3

www.DataSheet4U.com 8Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F008B3 MT28F800B3 3V Only, Dual Supply (Smart 3) FEATURES Eleven erase blocks: 40-Pin 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Eight main memory blocks Smart 3 technology (B3): 3.3V ±0.3V VCC 3.3V ±0.3V VPP application programming 5V ±10% VPP application/production programming1 Compatible with 0.3µm Smart 3 device Advanced 0.18µm CMOS floating-gate process Address access time: 90ns 100,000 ERASE cycles Industry-standard pinouts Inputs and outputs are fully TTL-compatible Automated write and erase algorithm Two-cycle WRITE/ERASE sequence DataSheet4U.com TSOP, SOP and FBGA packaging options Byte- or word-wide READ and WRITE (MT28F800B3): 1 Meg x 8/512K x 16 TSOP Type I 48-Pin TSOP Type I 44-Pin SOP DataShee OPTIONS Timing 90ns access Configurations 1 Meg x 8 512K x 16/1 Meg x 8 Boot Block Starting Word Address Top (7FFFFh) Bottom (00000h) Operating Temperature Range Commercial (0ºC to +70ºC) Extended (-40ºC to +85ºC) Packages 40-pin TSOP Type I (MT28F008B3) 48-pin TSOP Type I (MT28F800B3) 44-pin SOP (MT28F800B3) NOTE: MARKING -9 GENERAL DESCRIPTION MT28F008B3 MT28F800B3 T B None ET VG WG SG The MT28F008B3 (x8) and MT28F800B3 (x16/x8) are low-voltage, nonvolatile, electrically block-erasable (flash), programmable memory devices containing 8,388,608 bits organized as 524,288 words (16 bits) or 1,048,576 bytes (8 bits). Writing and erasin...