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MT29F16G08ABCCB

Micron

NAND Flash Memory

Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G...


Micron

MT29F16G08ABCCB

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Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features Open NAND Flash Interface (ONFI) 2.2-compliant1 Single-level cell (SLC) technology Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K + 28K bytes) – Plane size: 2 planes x 2048 blocks per plane – Device size: 16Gb: 4096 blocks; 32Gb: 8192 blocks; 64Gb: 16,384 blocks Synchronous I/O performance – Up to synchronous timing mode 5 – Clock rate: 10ns (DDR) – Read/write throughput per pin: 200 MT/s Asynchronous I/O performance – Up to asynchronous timing mode 5 – tRC/tWC: 20ns (MIN) Array performance – Read page: 35µs (MAX) – Program page: 350µs (TYP) – Erase block: 1.5ms (TYP) Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7-1.95V, 2.7–3.6V Command set: ONFI NAND Flash Protocol Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 100). RESET (FFh) required as first command after power-on Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status Data strobe (DQS) signals provide a hardware met...




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