MT29F1G08ABBDAHC

Micron Confidential and Proprietary Preliminary‡ 1Gb x8, x16: NAND Flash Memory Features NAND Flash Memory MT29F1G08ABADAWP, MT29F1G08ABBDAH4, MT29F1G08ABBDAHC, MT29F1G16ABBDAH4, MT29F1G16ABBDAHC, MT29F1G08ABADAH4 Features Open NAND Flash Interface (ONFI) 1.0-compliant1 Single-level cell (SLC) technology Organization – Page size x8: 2112 bytes (2048 + 64 bytes) – Page size x16: 1056 words (1024 + 32 words) – Block size: 64 pages (128K + 4K bytes) – Device size: 1Gb: 1024 blocks Asynchronous I/O performance – tRC/tWC: 20ns (3.3V), 25ns (1.8V) Array performance – Read page: 25µs3 – Program page: 200µs (TYP, 3.3V and 1.8V)3 – Erase block: 700µs (TYP) Command set: ONFI NAND Flash Protocol Advanced command set – Program page cache mode5 – Read page cache mode5 – One-time programmable (OTP) mode – Read unique ID – Internal data move Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status Internal data move operations supported within the device from which data is read Ready/busy# (R/B#) signal provides a hardware method for detecting operation completion WP# signal: write protect entire device First block (block address 00h) is valid when shipped from factory with ECC. For minimum required ECC, see Error Management. Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000 RESET (FFh) required as first command after poweron Alternate method of device initialization ...