MT29F32G08MAA

Micron Confidential and Proprietary Advance‡ 32Gb, 64Gb, 128Gb: NAND Flash Features NAND Flash Memory MT29F32G08MAA ES, MT29F32G08CBAAA, MT29F64G08CFAAA, MT29F64G08CEAAA, MT29F128G08TAA ES, MT29F128G08CJAAA, MT29F128G08CKAAA Features Open NAND Flash Interface (ONFI) 2.0-compliant Multilevel cell (MLC) technology Organization Page size: x8: 4314 bytes (4096 + 218 bytes) – Block size: 128 pages (512K + 27K bytes) – Plane size: 4096 blocks – Device size: 32Gb, 8192 blocks; 64Gb, 16,384 blocks; 128Gb, 32,768 blocks READ performance – Random read: 50µs – Sequential read: 20ns PROGRAM performance – Page program: 900µs (TYP) – Block erase: 3ms (TYP) Endurance: 10,000 PROGRAM/ERASE cycles1 First block (block address 00h) guaranteed to be valid with ECC when shipped from factory1 Industry-standard basic NAND Flash command set Advanced command set – PROGRAM PAGE CACHE MODE – PAGE READ CACHE MODE – Two-plane commands – Interleaved die operations – READ UNIQUE ID Operation status byte provides a software method of detecting: – Operation completion – Pass/fail condition – Write-protect status Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM and ERASE cycle completion WP# signal: entire-device hardware write protect RESET required as first command after power-up INTERNAL DATA MOVE operations supported within the plane from which data is read Figure 1: 48-Pin TSOP Type 1 Options Density2: 32Gb, 64Gb, 128Gb Device width: x8 ...