MT29F32G08TAAWC

Micron Confidential and Proprietary 8Gb, 16Gb, and 32Gb: x8 NAND Flash Memory Features NAND Flash Memory MLC MT29F8G08MAAWC, MT29F8G08MAAWP, MT29F16G08QAAWC,MT29F32G08TAAWC Features Organization – Page size x8: 2,112 bytes (2,048 + 64 bytes) Block size: 128 pages (256K + 8K bytes) – Plane size: 2,048 blocks – Device size: 8Gb: 4,096 blocks; 16Gb: 8,192 blocks; 32Gb: 16,384 blocks READ performance – Random READ: 50µs – Sequential READ: 25ns WRITE performance – PROGRAM PAGE: 650µs (TYP) – BLOCK ERASE: 2ms (TYP) Endurance: 10,000 PROGRAM/ERASE cycles (with ECC and invalid block mapping) First block (block address 00h) guaranteed to be valid with ECC when shipped from factory Industry-standard basic NAND Flash command set New commands – PAGE READ CACHE MODE – TWO-PLANE/MULTIPLE-DIE READ STATUS – Two-plane commands for concurrent-plane operations – READ UNIQUE ID (contact factory) – READ ID2 (contact factory) Operation status byte provides a software method of detecting: – PROGRAM/ERASE/READ operation completion – PROGRAM/ERASE pass/fail condition – Write-protect status Ready/busy# (R/B#) signal provides a hardware method of detecting PROGRAM, READ, or ERASE cycle completion WP# signal: Entire device hardware write protect Staggered power-up sequence: Issue RESET (FFh) command Figure 1: 48-Pin TSOP Type 1 Options Density1 – 8Gb (single-die stack) – 16Gb (dual-die stack) – 32Gb (quad-die stack) Device width: x8 Configuration # of die # of # of I/O ...