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MT29F64G08CECCB Datasheet

Part Number MT29F64G08CECCB
Manufacturers Micron
Logo Micron
Description NAND Flash Memory
Datasheet MT29F64G08CECCB DatasheetMT29F64G08CECCB Datasheet (PDF)

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB packa.

  MT29F64G08CECCB   MT29F64G08CECCB






NAND Flash Memory

New Product VTS40100CT, VF40100C, VB40100C & VI40100C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.375 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance 2 VTS40100CT PIN 1 PIN 3 PIN 2 CASE 3 1 VF40100C PIN 1 PIN 3 PIN 2 2 3 1 • Meets MSL level 1, per J-STD-020C, LF max peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 seconds (for TO-220AB, ITO-220AB & TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS TO-263AB K K TO-262AA 2 1 1 VB40100C PIN 1 PIN 2 K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB & TO-262AA Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum VI40100C PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A Tj max. 2 x 20 A 100 V 250 A 0.61 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TST.


2014-04-22 : P17N40    17N40    A1252    A1252    A1252-T    A1252H    A1252WV    A1252WR    A1252WV-SF    A1252WR-SF   


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