MT29F8G08ABCBB

Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features Open NAND Flash Interface (ONFI) 2.1-compliant1 Single-level cell (SLC) technology Organization – Page size x8: 4320 bytes (4096 + 224 bytes) – Block size: 128 pages (512K +28 K bytes) – Plane size: 2 planes x 1024 blocks per plane – Device size: 8Gb: 2048 blocks Synchronous I/O performance – Up to synchronous timing mode 4 – Clock rate: 12ns (DDR) – Read/write throughput per pin: 166 MT/s Asynchronous I/O performance – Up to asynchronous timing mode 4 – tRC/tWC: 25ns (MIN) Array performance – Read page: 25µs (MAX) – Program page: 230µs (TYP) – Erase block: 700µs (TYP) Operating Voltage Range – VCC: 2.7–3.6V – VCCQ: 1.7–1.95V, 2.7–3.6V Command set: ONFI NAND Flash Protocol Advanced Command Set – Program cache – Read cache sequential – Read cache random – One-time programmable (OTP) mode – Multi-plane commands – Multi-LUN operations – Read unique ID – Copyback First block (block address 00h) is valid when shipped from factory. For minimum required ECC, see Error Management (page 93). RESET (FFh) required as first command after poweron Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status Data strobe (DQS) signals provide a hardware method for synchronizing data DQ in the synchronous interface Copyback operations supported within the plan...