MOS-TECH Semiconductor Co.,LTD
MT30N03
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
● Super high dense...
MOS-TECH Semiconductor Co.,LTD
MT30N03
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Typ
30V 30A
11@ VGS=10V 17@ VGS=4.5V
NOTE:The MT50N03 is available in a lead-free package
ABSOLUTE MAXIMUM RATINGS(TA=25℃ unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage Drain Current-Continuousª@Tj=125℃
Symbol
VDS VGS ID
Limit
30 ±20 30
- Pulse d b
IDM 90
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
IS PD
TJ,TSTG
30 50
-55 to 175
Unit
V V A
A
A W
℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50 ℃/W
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Mos-Tech Semiconductor Co.,LTD.
MT30N03
ELECTRICAL CHARACTERISTICS (TA=25℃ unless ...