4 MEG x 4 FPM DRAM
DRAM
FEATURES
• Industry-standard x4 pinout, timing, functions, and packages • High-performance, low...
4 MEG x 4 FPM DRAM
DRAM
FEATURES
Industry-standard x4 pinout, timing, functions, and packages High-performance, low-power
CMOS silicon-gate process Single power supply (+3.3V ±0.3V or +5V ±0.5V) All inputs, outputs and clocks are TTL-compatible Refresh modes: RAS#-ONLY, HIDDEN and CAS#BEFORE-RAS# (CBR) Optional self refresh (S) for low-power data retention 11 row, 11 column addresses (2K refresh) or 12 row, 10 column addresses (4K refresh) FAST-PAGE-MODE (FPM) access 5V tolerant inputs and I/Os on 3.3V devices
MT4LC4M4B1, MT4C4M4B1 MT4LC4M4A1, MT4C4M4A1
For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/mti/msp/html/datasheet.html
PIN ASSIGNMENT (Top View) 24/26-Pin SOJ
VCC DQ0 DQ1 WE# RAS# **NC/A11 A10 A0 A1 A2 A3 VCC
24/26-Pin TSOP
VCC VSS DQ0 DQ3 DQ1 DQ2 WE# CAS# RAS# OE# **NC/A11 A9 A10 A0 A8 A1 A7 A2 A6 A3 A5 VCC A4 VSS 1 2 3 4 5 6 8 9 10 11 12 13 26 25 24 23 22 21 19 18 17 16 15 14 VSS DQ3 DQ2 CAS# OE# A9 A8 A7 A6 A5 A4 VSS
1 2 3 4 5 6 8 9 10 11 12 13
26 25 24 23 22 21 19 18 17 16 15 14
OPTIONS
Voltage 3.3V 5V Refresh Addressing 2,048 (2K) rows 4,096 (4K) rows Packages Plastic SOJ (300 mil) Plastic TSOP (300 mil) Timing 50ns access 60ns access Refresh Rates Standard Refresh Self Refresh (128ms period)
MARKING
LC C B1 A1 DJ TG -5 -6 None S*
**NC on 2K refresh and A11 on 4K refresh options.
4 MEG x 4 FPM DRAM PART NUMBERS
PART NUMBER MT4LC4M4B1DJ-6 MT4LC4M4B1DJ-6 S MT4LC4M4B1TG-6 MT4LC4M4B1TG-6 S MT4LC4...