MT4S23U

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT4S23U VHF~UHF Band Low Noise Amplifier Applications Low Noise Figure: NF = 1.4dB (Typ.) (@f = 2 GHz) High Gain: |S21e|2 = 12dB (Typ.) (@f = 2 GHz) Compatible with 2SC5319 MT4S23U Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note.1) Tj Tstg Rating 8 5 1.5 40 10 170 150 −55 to 150 Unit V V V mA mA mW °C °C USQ 1.Emitter1(E1) 2.Collector(C) 3.Emitter2(E2) 4.Base(B) JEDEC ― JEITA ― TOSHIBA 2-2K1A Weight: 6 mg (typ.) Note.1: The device is mounted on a FR4 board (500 mm2 x 1.55 mm (t)) Note.2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking 4 3 Type Name ＭＴ 12 1 2010-06-02 Microwave Characteristics (Ta = 25°C) Characteristic Transition fre...