MT50P03

Mos-Tech Semiconductor Co.,LTD. P-Channel Enhancement Mode Field Effect Transistor MT50P03 FEATURES ● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TO-252 package PRODUCT SUMMARY VDSS ID RDS(ON) (mΩ) Typ -30V -50A 20@ VGS=-10V 28 @ VGS=-4.5V NOTE：The MT50P03 is available in a lead-free package G S DS G D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ Symbol VDS VGS ID Limit -30 ±20 -50 - Pulse d b IDM -105 Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range IS PD TJ,TSTG -1.8 150 -55 to 150 Unit V V A A A W ℃ THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 50 ℃/W ©2007 Mos-Tech Semiconductor 1 http//www.mtsemi.com Mos-Tech Semiconductor Co....