DatasheetsPDF.com

MT58L64L32F Datasheet

Part Number MT58L64L32F
Manufacturers Micron Semiconductor
Logo Micron Semiconductor
Description (MT58LxxxLxxF) 2Mb SRAM
Datasheet MT58L64L32F DatasheetMT58L64L32F Datasheet (PDF)

m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D . FEATURES w w w NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L128L18F, MT58L64L32F, MT58L64L36F; MT58L128V18F, MT58L64V32F, MT58L64V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs .

  MT58L64L32F   MT58L64L32F






Part Number MT58L64L32P
Manufacturers Micron Semiconductor
Logo Micron Semiconductor
Description (MT58LxxxxP) 2Mb SRAM
Datasheet MT58L64L32F DatasheetMT58L64L32P Datasheet (PDF)

m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D FEATURES . w w w NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L128L18P, MT58L64L32P, MT58L64L36P; MT58L128V18P, MT58L64V32P, MT58L64V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, SingleCycle Deselect • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Single-cycle de.

  MT58L64L32F   MT58L64L32F







Part Number MT58L64L32D
Manufacturers Micron Semiconductor
Logo Micron Semiconductor
Description (MT58LxxxLxxD) 2Mb SRAM
Datasheet MT58L64L32F DatasheetMT58L64L32D Datasheet (PDF)

m o .c U 4 t ™ e 2Mb SYNCBURST e h SRAM S a t a D . FEATURES w w w NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 PIPELINED, DCD SYNCBURST SRAM MT58L128L18D, MT58L64L32D, MT58L64L36D 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and.

  MT58L64L32F   MT58L64L32F







(MT58LxxxLxxF) 2Mb SRAM

m o .c U 4 t ™ 2Mb SYNCBURST e e h SRAM S a t a D . FEATURES w w w NOT RECOMENDED FOR NEW DESIGNS 2Mb: 128K x 18, 64K x 32/36 FLOW-THROUGH SYNCBURST SRAM MT58L128L18F, MT58L64L32F, MT58L64L36F; MT58L128V18F, MT58L64V32F, MT58L64V36F 3.3V VDD, 3.3V or 2.5V I/O, Flow-Through • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply (VDD) • Separate +3.3V or +2.5V isolated output buffer supply (VDDQ) • SNOOZE MODE for reduced-power standby • Common data inputs and data outputs • Individual BYTE WRITE control and GLOBAL WRITE • Three chip enables for simple depth expansion and address pipelining • Clock-controlled and registered addresses, data I/Os and control signals • Internally self-timed WRITE cycle • Burst control pin (interleaved or linear burst) • Automatic power-down • 100-pin TQFP package • Low capacitive bus loading • x18, x32, and x36 versions available OPTIONS • Timing (Access/Cycle/MHz) 6.8ns/8.0ns/125 MHz 7.5ns/8.8ns/113 MHz 8.5ns/10ns/100 MHz 10ns/15ns/66 MHz • Configurations 3.3V I/O 128K x 18 64K x 32 64K x 36 2.5V I/O 128K x 18 64K x 32 64K x 36 • Packages 100-pin TQFP m o .c U 4 t e e h S a t a .D w w w *JEDEC-standard MS-026 BHA (LQFP). 100-Pin TQFP* GENERAL DESCRIPTION MARKING -6.8 -7.5 -8.5 -10 MT58L128L18F MT58L64L32F MT58L64L36F MT58L128V18F MT58L64V32F MT58L64V36F T None • Operating Temperature Range Commercial (0°C to +70°C) Part Number Example: MT58L64L36FT-8.5 The Micron® SyncBurst™ SRAM family employs high-speed, low-p.


2006-02-28 : sx09q002_bza    SX09Q003_ZZA_1    sx09q005    sx09q005_zza    SX14Q001    SX14Q001_ZZA    sx14q004    sx14q004_zza    SX16H003    SX16H003_ZZA   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)