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MT5C2565 Datasheet

Part Number MT5C2565
Manufacturers ASI
Logo ASI
Description 64K x 4 SRAM MEMORY ARRAY
Datasheet MT5C2565 DatasheetMT5C2565 Datasheet (PDF)

SRAM Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89524 • MIL-STD-883 MT5C2565 PIN ASSIGNMENT (Top View) FEATURES • • • • High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ OE\ Vss 1 2 3 4 5.

  MT5C2565   MT5C2565






Part Number MT5C2565
Manufacturers Micron
Logo Micron
Description 64K x 4 SRAM
Datasheet MT5C2565 DatasheetMT5C2565 Datasheet (PDF)

SRAM FEATURES • High speed: 10, 12, 15, 20, 25 and 35ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL-compatible OPTIONS • Timing IOns access 12ns access 15ns access 20ns access 25ns access 35ns access • Packages Plastic DIP (300 mil) Plastic SOJ (300 mil) MARKING -10 -12 -15 -20 -25 -35 None DJ • 2V data retention • Lowpower L P • Temperature Commercial (O°C to +70°C) .

  MT5C2565   MT5C2565







64K x 4 SRAM MEMORY ARRAY

SRAM Austin Semiconductor, Inc. 64K x 4 SRAM SRAM MEMORY ARRAY AVAILABLE AS MILITARY SPECIFICATIONS • SMD 5962-89524 • MIL-STD-883 MT5C2565 PIN ASSIGNMENT (Top View) FEATURES • • • • High Speed: 12, 15, 20, 25, 35, and 45ns Battery Backup: 2V data retention Low power standby High-performance, low-power, CMOS double-metal process • Single +5V (+10%) Power Supply • Easy memory expansion with CE\ • All inputs and outputs are TTL compatible NC A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 CE\ OE\ Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc A15 A14 A13 A12 A11 A10 NC NC DQ4 DQ3 DQ2 DQ1 WE\ A1 A0 NC Vcc NC 3 2 1 28 27 A2 4 A3 5 A4 6 A5 7 A6 8 A7 9 A8 1 0 A9 1 1 CE\ 1 2 13 14 15 16 17 DQ1 WE\ NC Vss OE\ 26 25 24 23 22 21 20 19 18 28-Pin DIP (C) (300 MIL) 28-Pin LCC (EC) A15 A14 A13 A12 A11 A10 DQ4 DQ3 DQ2 OPTIONS • Timing 15ns access 20ns access 25ns access 35ns access 45ns access 55ns access 70ns access • Package(s) Ceramic DIP (300 mil) Ceramic LCC MARKING -15 -20 -25 -35 -45 -55* -70* GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) and output enable (OE\) capability. These enhancements can place the outputs in High-Z for additional flexibility in system desi.


2005-08-10 : MTA106xxx    MTA10xx    MT5C2565    MT5C2564    MT5C1008    MT5C1001    MT5C6408    BT453    695-x    695   


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