07
MOS-TECH Semiconductor Co.,LTD
January 20
07
Single P-Channel PowerMOSFET -30V, -A, mΩ
General Descr...
07
MOS-TECH Semiconductor Co.,LTD
January 20
07
Single P-Channel Power
MOSFET -30V, -A, mΩ
General Description
This P-Channel Logic Level
MOSFET is produced using Mos-tech's advanced PowerTrench process. It has been optimized for battery power management applications.
Applications
Battery management
Load switch
Battery protection
DC/DC conversion
Features
Max rDS(on) = mΩ @ VGS = -10 V, ID = -A Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A Low Gate Charge High performance trench technology for extremely low
rDS(on) RoHS Compliant
S D D
16
PIN 1
G DD TSOP-6
2 3
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol VDS VGS ID
PD TJ, TSTG
Drain-Source
Voltage
Parameter
Gate-Source
Voltage
Drain Current - Continuous
- Pulsed Maximum Power dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1a) (Note 1b)
5
4
Ratings -30 ±2 - -20 1.6 0.8
-55 to +150
Units V V A
W °C
Thermal Charac...