MOS-TECH Semiconductor Co.,LTD
MT6680
N-Channel Power MOSFET
30V, 15A, 9.0mΩ Features
Max rDS(on) = 9mΩ at VGS = 10V, ID = 15A Max rDS(on) = 12mΩ at VGS = 4.5V, ID =12.6A HBM ESD protection level of 3KV typical (note 3)
High performance trench technology for extremely low rDS(on) High power and current handling capability
RoHS compliant
General...
