Mos-TechSemiconductorCo.,LTD.
N‐Channel Enhancement Mode Field Effect Transistor
MT6968
Common Drain, ...
Mos-TechSemiconductorCo.,LTD.
N‐Channel Enhancement Mode Field Effect Transistor
MT6968
Common Drain, ESD Protection
FEATURES
● Super high dense cell design for low RDS(ON) ● Rugged and reliable ● Simple drive requirement ● TSSOP‐8 package
NOTE：The MT6968 is available in a lead-free package
VDSS 20V
PRODUCT SUMMARY
ID RDS(ON) (mΩ) Typ
6.5A
18@ VGS=4.5V 23 @ VGS=2.5V
ESD Protected: 3000 V
ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted）
Parameter Drain‐Source
Voltage Gate‐Source
Voltage Continuous Drain Current A Pulsed Drain Current B Continuous Source Current (Diode Conduction)a Power Dissipation Junction and Storage Tem...
