MT6L56E

MT6L56E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Two devices are built into the super-thin and ultra-super-mini (6-pin) ES6 package. www.DataSheet4U.com Mounted Devices Q1: SSM (TESM) Three-pin (SSM/TESM) product No. MT3S07S (MT3S07T) Q2: TESM MT3S08T Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg Q1 10 5 1.5 25 7 150 125 −55~125 Q2 20 8 1.5 40 10 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2N1C Weight: 3 mg (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total power dissipation of Q1 and Q2 mounted on the circuit board Marking 6 5 4 Pin Connections...