MT6L58AFS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AFS
VHF~UHF Band Low-Noise Amplifier Applications
...
MT6L58AFS
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
MT6L58AFS
VHF~UHF Band Low-Noise Amplifier Applications
Two devices are incorporated in a fine-pitch, small-mold package (6 pins): fS6.
Unit: mm
1.0±0.05 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05
1.0±0.05
0.7±0.05
z Superior noise characteristics z Superior performance in buffer and oscillator applications.
1 2 3
6 5 4 0.1±0.05
Mounted Devices
www.DataSheet4U.com
Q1 Corresponding three-pin products: TESM(fSM) mold products MT3S06T (MT3S06FS) Q2 MT3S03AT (MT3S03AFS)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector- base
voltage Collector- emitter
voltage Emitter- base
voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC(Note 1) Tj Tstg Rating 10 5 1.5 15 7 100 110 (Note 2) 125 −55~125 Unit 10 5 2 40 10 V V V mA mA mW °C °C
0.48 -0.04 fS6
+0.02
1. Collector1 (C1) 2. Emitter1 (E1) 3. Collector2 (C2) 4. Base2 (B2) 5. Emitter2 (E2) 6. Base1 (B1)
JEDEC JEIAJ Toshiba
― ― 2-1F1A
Weight: 0.001g (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the ...