MT6L75FS

MT6L75FS TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE MT6L75FS VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Two devices are built in to the fine pich small mold package (6pins):fs6 0.1±0.05 1.0±0.05 0.8±0.05 Unit: mm 0.1±0.05 0.15±0.05 It exsels in the buffer and oscillation use. 0.35 0.35 1.0±0.05 0.7±0.05 1 2 3 +0.02 -0.04 Mounted Devices www.DataSheet4U.com Three-pin fSM mold products are corresponded Q1 MT3S07FS Q2 MT3S106FS 6 5 4 0.1±0.05 Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTICS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector power dissipation Junction temperature Storage temperature range SYMBOL VCBO VCEO VEBO IC IB PC (Note 1) Tj Tstg RATING Q1 10 5 1.5 25 10 100 110 (Note 2) 125 −55~125 Q2 13 6 1 80 20 UNIT V V V mA mA mW °C °C 0.48 1.COLLECTOR 1 2.EMITTER1 3.COLLECTOR2 4.BASE2 5.EMITTER2 6.BASE1 fS6 JEDEC JEITA TOSHIBA ― ― 2-1F1A Weight : 0.001g (typ.) Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individ...