MTA010N01SN3

CYStech Electronics Corp. Spec. No. : C131N3 Issued Date : 2016.03.28 Revised Date : Page No. : 1/9 14V N-Channel Enhancement Mode MOSFET MTA010N01SN3 BVDSS ID@VGS=4.5V, TA=25°C RDSON@VGS=4.5V, ID=7A RDSON@VGS=3V, ID=5A 14V 7.4A 12mΩ(typ) 13.5mΩ(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol MTA010N01SN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTA010N01SN3-0-T1-G SOT-23 (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTA010N01SN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C131N3 Issued Date : 2016.03.28 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD Tj ; Tstg Limits 14 ±8 7.4 5.9 42 1.38 0.01 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in²...