CYStech Electronics Corp.
Spec. No. : C915S3 Issued Date : 2017.02.06 Revised Date : Page No. : 1/9
20V N-Channel Enha...
CYStech Electronics Corp.
Spec. No. : C915S3 Issued Date : 2017.02.06 Revised Date : Page No. : 1/9
20V N-Channel Enhancement Mode
MOSFET
MTA340N02S3
BVDSS ID@VGS=4.5V, TA=25°C
RDSON@VGS=4.5V, ID=650mA
RDSON@VGS=2.5V, ID=500mA
RDSON@VGS=1.8V, ID=200mA
20V 0.8A
264mΩ(typ) 325mΩ(typ) 371mΩ(typ)
Features
Simple drive requirement Small package outline ESD protected gate Pb-free lead plating and halogen-free package
Symbol
MTA340N02S3
Outline
SOT-323 D
G：Gate S：Source D：Drain
S G
Ordering Information
Device MTA340N02S3-0-T1-G
Package
Shipping
SOT-323 (Pb-free lead plating and halogen-free package)
3000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products Product name
MTA340N02S3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C915S3 Issued Date : 2017.02.06 Revised Date : Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current
(Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
(Note 3)
Operating Junction and Storage Temperature Range
Symbol VDS VGS
ID
IDM PD Tj ; Tstg
Limits 20 ±12 0.8 0.64 3.2 0.34
-55~+150
Unit V
A
W °C
Thermal Performance
Parameter
Symbol
Limit
Thermal Resistance,...
