CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTB010N06RJ3
Spec. No. : C016J3 Issued Date : 2018.04...
CYStech Electronics Corp.
N-Channel Enhancement Mode Power
MOSFET
MTB010N06RJ3
Spec. No. : C016J3 Issued Date : 2018.04.11 Revised Date : 2018.04.12 Page No. : 1/ 9
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and halogen-free package
BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=20A
RDS(ON)@VGS=4.5V, ID=20A
60V 43A
10.3 mΩ(typ)
15.8 mΩ(typ)
Symbol
MTB010N06RJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTB010N06RJ3-0-T3-G
Package
TO-252 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products Product name
MTB010N06RJ3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C016J3 Issued Date : 2018.04.11 Revised Date : 2018.04.12 Page No. : 2/ 9
Absolute Maximum Ratings (TC=25°C)
Parameter
Drain-Source
Voltage (Note 1) Gate-Source
Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 1)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 1)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 4)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 4)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current
(Note 3)
Single Pulse Avalanche Energy @ L=0.1mH, ID=32A, VDD=30V
(Note 2&5)
Repetitive Avalanch...
