MTB050N15ARJ3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB050N15ARJ3 Spec. No. : C035J3 Issued Date : 2019.06.03 Revised Date : Page No. : 1/ 9 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@TC=25C, VGS=10V RDS(ON)@VGS=10V, ID=15A RDS(ON)@VGS=4.5V, ID=10A 150V 20.6A 46.4 mΩ(typ) 50.8 mΩ(typ) Symbol MTB050N15ARJ3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package Shipping MTB050N15ARJ3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB050N15ARJ3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C035J3 Issued Date : 2019.06.03 Revised Date : Page No. : 2/ 9 Absolute Maximum Ratings (TC=25C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V Single Pulse Avalanche Current @L=0.1mH (Note 3) Single Pulse Avalanche Energy @ L=0.5mH, ID=20 Amps, VDD=50V (Note 5) Repetitive Avalanche Energy (Note 3...