DatasheetsPDF.com

MTB180A06KH8 Datasheet

Part Number MTB180A06KH8
Manufacturers CYStech
Logo CYStech
Description Dual N-Channel Enhancement Mode Power MOSFET
Datasheet MTB180A06KH8 DatasheetMTB180A06KH8 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C052H8 Issued Date : 2019.09.06 Revised Date : Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB180A06KH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  ESD protected gate  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A.

  MTB180A06KH8   MTB180A06KH8






Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C052H8 Issued Date : 2019.09.06 Revised Date : Page No. : 1/ 10 Dual N-Channel Enhancement Mode Power MOSFET MTB180A06KH8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  ESD protected gate  Pb-free lead plating and Halogen-free package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2.2A RDS(ON)@VGS=4.5V, ID=1.3A RDS(ON)@VGS=3.3V, ID=1A 60V 8.05A 5.09A 2.3A 1.8A 172mΩ(typ) 204mΩ(typ) 390mΩ(typ) Equivalent Circuit MTB180A06KH8 Outline Pin 1 DFN5×6 Pin 1 G:Gate D:Drain S:Source Ordering Information Device MTB180A06KH8-0-T6-G MTB180A06KH8 Package DFN 5 ×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name CYStek Product Specification CYStech Electronics Corp. Spec. No. : C052H8 Issued Date : 2019.09.06 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V (Note 1) Continuous Drain Current @TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drai.


2020-03-06 : MMBD914WS    MMBD914WS    MMBD914WS    MMBD6050WS    MMBD6050WS    1SMA4741    1SMA4742    1SMA4743    1SMA4744    1SMA4745   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)