MTB1D8N04E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB1D8N04E3 Spec. No. : C007E3 Issued Date : 2018.10.18 Revised Date : Page No. : 1/ 8 Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  RoHS compliant package BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=50A 40V 180A 20A 1.7mΩ(typ) Symbol MTB1D8N04E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device Package Shipping MTB1D8N04E3-0-UB-X TO-220 (Pb-free lead plating package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB1D8N04E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C007E3 Issued Date : 2018.10.18 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25C) Parameter Symbol Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @ TC=25C, VGS=10V (Note 1) Continuous Drain Current @ TC=100C, VGS=10V (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current Avalanche Current @L=0.1mH Single Pulse Avalanche Energy @ L=1mH, ID=48 Amps, VDD=25V (Note 4) Repetitive Avalanche Energy (Note 3) TC=25C (Note 1) Power Dissipation TC=100C TA=25C (N...