MTB1K0A20KQ8

CYStech Electronics Corp. Dual N-Channel Enhancement Mode Power MOSFET MTB1K0A20KQ8 Spec. No. : C043Q8 Issued Date : 2017.08.17 Revised Date : 2020.01.13 Page No. : 1/9 Features Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package ESD protected gate Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 200V 0.9A 0.72A 755mΩ(typ) 785mΩ(typ) Equivalent Circuit MTB1K0A20KQ8 Outline SOP-8 D2 D2 D1 D1 G：Gate D：Drain S：Source G2 S2 G1 S1 Ordering Information Device MTB1KA20KQ8-0-T3-G MTB1KA20KQ8-0-TF-G Package SOP-8 (Pb-free lead plating and halogen-free package) SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel 4000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel, TF : 4000 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name MTB1K0A20KQ8 Preliminary CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TC=25C Continuous Drain Current @ VGS=10V, TC=100C Continuous Drain Current @ VGS=10V, TA=25C Continuous Drain Current @ VGS=10V, TA=70C Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=2A, VDD...