CYStech Electronics Corp.
Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No. : 1/ 11
Dual ...
CYStech Electronics Corp.
Spec. No. : C978H8 Issued Date : 2017.01.19 Revised Date : 2017.02.10 Page No. : 1/ 11
Dual N-Channel Enhancement Mode Power
MOSFET
MTB20A04DH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
ID@VGS=10V, TA=70°C
Low On Resistance
RDS(ON)@VGS=10V, ID=8A
Simple Drive Requirement Low Gate Charge
RDS(ON)@VGS=4.5V, ID=4A
Fast Switching Characteristic
Pb-free lead plating and Halogen-free package
40V 18.5A 11.7A 5.6A 4.5A 16.4mΩ(typ) 18.5mΩ(typ)
Equivalent Circuit
MTB20A04DH8
Outline
Pin 1
DFN5×6 Pin 1
G:Gate D:Drain S:Source
Ordering Information
Device MTB20A04DH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
M...