MTB20N04J3

CYStech Electronics Corp. Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB20N04J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TC=100°C Features RDSON(TYP) VGS=10V, ID=10A VGS=4.5V, ID=8A Low Gate Charge Simple Drive Requirement Pb-free lead plating package 40V 23A 16.3A 17.5mΩ 20.8mΩ Equivalent Circuit MTB20N04J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTB20N04J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB20N04J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=1mH, ID=18A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS PD Tj, Tstg Spec. No. : C978J3 Issued Date : 2015.01.05 Revised Date : Page No. : 2/9 Limits 40 ±20 23 1...