CYStech Electronics Corp.
Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9
N-Channel Enhancem...
CYStech Electronics Corp.
Spec. No. : C895J3 Issued Date : 2015.12.10 Revised Date : Page No. : 1/9
N-Channel Enhancement Mode Power
MOSFET
MTBH0N25J3 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDSON(TYP)
VGS=10V, ID=3A VGS=4.5V, ID=2A
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating and halogen-free package
250V 3.5A 1.0A 780mΩ 735mΩ
Equivalent Circuit
MTBH0N25J3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device
Package
MTBH0N25J3-0-T3-G
TO-252 (Pb-free lead plating and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBH0N25J3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Volt...
