MTD55N10J3

CYStech Electronics Corp. Spec. No. : C863J3 Issued Date : 2012.06.28 Revised Date : 2013.12.30 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET MTD55N10J3 BVDSS ID RDSON(TYP) VGS=10V, ID=18A VGS=4.5V, ID=12A 100V 18A 53mΩ 56mΩ Features Low Gate Charge Simple Drive Requirement Pb-free lead plating package Equivalent Circuit MTD55N10J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device MTD55N10J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD55N10J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=18A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH (Note 2) Total Power Dissipation @TC=25℃ Total Power Dissipation @TA=25℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature *2. Duty cycle ≤ 1% Symbol VDS VGS ID ID IDM IAS EAS EAR Pd Tj, Tstg Spec. No. : C863J3 Issued Date : 2012.06.28 Revised Date : 2013.12.30 Page...