MTD55N10Q8

CYStech Electronics Corp. Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 1/9 N -Channel Logic Level Enhancement Mode Power MOSFET MTD55N10Q8 BVDSS ID VGS=10V, ID=4.5A RDSON(TYP) VGS=6V, ID=4A Features VGS=4.5V, ID=3A Low Gate Charge Simple Drive Requirement Pb-free lead plating package 100V 4.9A 52mΩ 57mΩ 73mΩ Symbol MTD55N10Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source Ordering Information Device MTD55N10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTD55N10Q8 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=10mH, ID=4.5A, VGS=20V, VDD=25V Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation *3 TA=25℃ TA=70℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IAS EAS EAR PD Tj, Tstg Spec. No. : C898Q8 Issued Date : 2013.04.19 Revised Date : 2014.03.31 Page No. : 2/9 Limits 100 ±20 4.9 3.9 32 *1 4.5 101 0.5 *2 3.1 2 -55~+150 Unit V A mJ W °C Thermal Data Parameter Symb...