CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ 10
N-Channel Enhanc...
CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 1/ 10
N-Channel Enhancement Mode Power
MOSFET
MTE100N10KRH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=2A
Features
Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic ESD protected gate Pb-free lead plating and Halogen-free package
100V 6.8A
3.0A 102mΩ(typ)
Symbol
MTE100N10KRH8
G：Gate D：Drain S：Source
Outline
Pin 1
S S S G
DFN5×6
D D D D
G S
S
S
D D D D
Pin 1
Ordering Information
Device MTE100N10KRH8-0-T6-G
Package
DFN 5 ×6 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products Product name
MTE100N10KRH8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C059H8 Issued Date : 2017.04.25 Revised Date : Page No. : 2/ 10
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Continuous Drain Current @TC=25°C, VGS=10V
(Note 5)
Continuous Drain Current @TC=100°C, VGS=10V
(Note 5)
Continuous Drain Current @TA=25°C, VGS=10V
(Note 2)
Continuous Drain Current @TA=70°C, VGS=10V
(Note 2)
Pulsed Drain Current @ VGS=10V
(Note 3)
Avalanche Current @L=0.1mH
(Note 3)
Body Diode Continuous Forward Current...
