MTN10N60E3

CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN10N60E3 BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=650V typically @ Tj=150℃ Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Adaptor LCD Panel Power TV Main Power SMPS Standby Power Symbol MTN10N60E3 Outline TO-220 G：Gate D：Drain S：Source MTN10N60E3 GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Symbol Drain-Source Voltage (Note 1) VDS Gate-Source Voltage VGS Continuous Drain Current ID Continuous Drain Current @TC=100°C ID Pulsed Drain Current @ VGS=10V (Note 2) IDM Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V EAS Repetitive Avalanche Energy EAR Peak Diode Recovery dv/dt (Note 3) dv/dt Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds TL Maximum Temperature for Soldering @ Package Body for 10 seconds TPKG ...