MTN12N60FP

CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTN12N60FP BVDSS :600V RDS(ON) : 0.6Ω typ. ID : 12A Description The MTN12N60FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Ballast Inverter Symbol MTN12N60FP Outline TO-220FP G：Gate D：Drain S：Source MTN12N60FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C743FP Issued Date : 2011.05.09 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125 in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature * Drain current limited by maximum junction temperature. Symbol VDS VGS ID ID IDM EAS ...