CYStech Electronics Corp.
N-CHANNEL MOSFET
MTN138KS3
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09...
CYStech Electronics Corp.
N-CHANNEL
MOSFET
MTN138KS3
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 1/7
Description
The MTN138KS3 is a N-channel enhancement-mode
MOSFET.
Features
Low on-resistance High ESD High speed switching Low-
voltage drive Easily designed drive circuits Easy to use in parallel Pb-free package
Symbol
MTN138KS3 D
G
G:Gate S S:Source
D:Drain
Outline
SOT-323 D
GS
Ordering Information
Device MTN138KS3-0-T1-G
Package
SOT-323 (Pb-free lead plating and halogen-free package)
Shipping 3000 pcs / Tape & Reel
MTN138KS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S3 Issued Date : 2007.11.06 Revised Date : 2013.09.03 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source
Voltage
Gate-Source
Voltage
Drain Current
Continuous Pulsed
Drain Reverse Current
Continuous Pulsed
Total Power Dissipation
Thermal Resistance, Junction to Ambient
ESD susceptibility
Operating Channel Temperature Range
Storage Temperature Range
Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a minimum pad size
*3. Human body model, 1.5kΩ in series with 100pF
Symbol VDSS
VGSS ID IDP IDR IDRP PD RθJA
TCH Tstg
Limits
60
±20
220 800 220 800 200
625
1500 -55~+150 -55~+150
*1
*1 *2 *2 *3
Unit V V
mA
mW °C/W
V °C
Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max.
Static BVDSS* VGS(th) IGSS IDSS
RDS(ON)*
GFS
60 0.5 -
200
Dynamic
Ciss Coss Crss ...