MTN13N45E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN13N45E3 Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 1/8 BVDSS : 450V RDS(ON) : 0.55Ω ID : 13A Description The MTN13N45E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features BVDSS=500V typically @ Tj=150℃ Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package Applications Power Factor Correction Flat Panel Power Full and Half Bridge Power Supplies Two-Transistor Forward Power Supplies Symbol MTN13N45E3 Outline TO-220 G：Gate D：Drain S：Source MTN13N45E3 GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C718E3 Issued Date : 2009.06.05 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy (Note 3) Avalanche Current (Note 2) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) Maximum Temperature for Soldering @ Lead at 0.125in(3.175mm) from case for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and ...