MTN2300N3

CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2300N3 Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Features VDS=20V RDS(ON)=28mΩ@VGS=4.5V, IDS=6A RDS(ON)=38mΩ@VGS=2.5V, IDS=5.2A Low on-resistance Capable of 2.5V gate drive Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Equivalent Circuit MTN2300N3 Outline SOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C (Note 3) Continuous Drain Current @ TA=70°C (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ Linear Derating Factor Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board, t≤10sec. MTN2300N3 Symbol VDS VGS ID ID IDM PD Rth,ja Tj, Tstg Limits 20 ±8 6 4.8 20 1.25 0.01 100 -55~+150 Unit V V A A A W W/°C °C/W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C413N3 Issued Date : 2007.07.05 Revised Date : Page No. : 2/5 Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS ∆BVDSS/∆Tj VGS(th) IGSS IDSS IDSS *RDS(ON) 20 - - V VGS=0, ID=250μA - 0.1 - V/°C Reference to 25°C, ID=1mA 0.5 - 1.0 V VDS=VGS, ID=250μA - - ±100 nA VGS=±8V, VDS=0 - - 1 μA VDS=20V, VGS=0 ...