MTN2302V3

CYStech Electronics Corp. 20V N-CHANNEL Enhancement Mode MOSFET MTN2302V3 Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : 2010.06.18 Page No. : 1/9 Features VDS=20V RDS(ON)=85mΩ(max.)@VGS=4.5V, IDS=3.6A RDS(ON)=115mΩ(max.)@VGS=2.5V, IDS=3.1A Simple drive requirement Small package outline Capable of 2.5V gate drive Pb-free package Symbol MTN2302V3 Outline TSOT-23 D G：Gate S：Source D：Drain GS Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=4.5V, TA=25°C (Note 3) Continuous Drain Current @VGS=4.5V, TA=70°C (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation@ TA=25℃ Linear Derating Factor Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Limits 20 ±8 3.2 2.6 10 1.38 0.01 -55~+150 Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Unit V V A A A W W/°C °C MTN2302V3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C323V3 Issued Date : 2009.01.19 Revised Date : 2010.06.18 Page No. : 2/9 Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) Symbol Rth,ja Limit 90 Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol ...