MTN2304M3

CYStech Electronics Corp. Spec. No. : C737M3 Issued Date : 2012.07.26 Revised Date : 2013.08.12 Page No. : 1/8 30V N-CHANNEL Enhancement Mode MOSFET MTN2304M3 BVDSS ID Features Single Drive Requirement Low On-resistance Fast Switching Characteristic Pb-free lead plating and halogen-free package RDSON(TYP) VGS=10V, ID=5A VGS=4.5V, ID=4A 30V 6A 20mΩ 28mΩ Symbol MTN2304M3 Outline SOT-89 G：Gate S：Source D：Drain DG D S Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TA=25°C Continuous Drain Current @VGS=10V, TA=70°C Pulsed Drain Current Total Power Dissipation (TA=25℃) VDS VGS ID ID IDM Pd 30 ±20 6 4.8 20 *1 1.2 *2 Linear Derating Factor 0.016 Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 Note : *1. Pulse width limited by safe operating area. *2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad. Unit V V A A A W W/ °C °C MTN2304M3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C737M3 Issued Date : 2012.07.26 Revised Date : 2013.08.12 Page No. : 2/8 Thermal Performance Parameter Symbol Thermal Resistance, Junction-to-Ambient (Note ) Rth,ja Note : Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad. Limit 104 Unit °C/W Electrical Characteristics (Tj=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions S...